| 摘要 |
<p>PURPOSE:To correct a defect of an active matrix array by forming an insulating material film on a signal line of the active matrix array. CONSTITUTION:A drain terminal of a transistor in which a flaw has been generated is cut by a B-B' line and detached from a picture element electrode 1a, and subsequently, a connecting part 12 is formed by a light CVD method or a spattering method, and connected to a connecting picture element electrode 1c. In this state an active matrix array 13 is positioned and next, a light beam generated by a laser or an ultraviolet region higher harmonic generating means 19 is stopped down by a lens 21 and radiated to a metal thin film of a metallic thin film glass substrate 24. The metal thin film is evaporated, and the evaporated metal is vapor-deposited onto the picture element electrodes 1a, 1c and a signal line insulating film 25. In such a way, a picture element flaw can be corrected easily.</p> |
