| 摘要 |
PURPOSE:To prevent a p-n junction from being mechanically damaged during a bonding operation, by interconnecting a part of an electrode provided on the top of the p-n junction on a semiconductor substrate, through an insulating film formed on a part of the surface of the semiconductor substrate. CONSTITUTION:When light is applied from above, a p-n junction 5 constituted by an n-type GaAs layer 2 and a p-type GaAs layer 3 absorbs the light and converts it electrically. Most of optical carriers effective for generating photoelectric current are created within the p-type GaAs layer 3, The photoelectric current thus generated by the optical carriers can be taken out by connecting an external lead terminal to electrodes 6 and 7. The electrodes 6 and 7 are insulated by silicon nitride films 9 deposited on a part of the surface of the p-type GaAs layer 3, on the end face of the p-n junction and on a part of the surface of the n-type GaAs substrate 1. Mechanical damage can be minimized by connecting the external lead terminal to the electrode 6 at a point where the electrode 6 is connected to the n-type GaAs substrate 1. |
