| 摘要 |
PURPOSE:To obtain a flattened interlayer insulating film in which an impurity distribution is uniform, by forming an oxide film whose thickness and impurity concentration are easily controllable, and then performing heat-treating after a silica coating film whose impurity concentration and film thickness are uniform is stuck. CONSTITUTION:On a polysilicon electrode 11 formed on a silicon substrate 10, an silicon oxide film 12 as an interlayer insulating film is grown by a CVD method, and by spin-coating of silicon compound solution containing boron and phosphorus, a silica coating film 13 containing B and P is stuck in thickness of about 2000Angstrom . By heat-treating in a nitrogen on steam atmosphere at a temperature of 600-900 deg.C, boron and phosphorus are diffused in the silicon oxide film 12 to form a BPSG film 14. Then, at the same time, this BPSG film 14 re-flows and turns to a gentle shape. Thereby, a flattened interlayer insulating film whose impurity distribution is uniform can be obtained.
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