发明名称 PREPARATION OF OXIDE SUPERCONDUCTING MATERIAL
摘要 PURPOSE:To maintain a stable superconducting characteristic even on or near the surface of an oxide superconducting material or in the inside thereof by adding a halogen element into the above-mentioned material and forming a film, then subjecting the material to a heat treatment. CONSTITUTION:The halogen element is added into the oxide superconducting material (e.g.: YBa2Cu3O6-8) to fill part or the whole of oxygen vacancy. The halogen element such as F element is added to the vacancy having some oxygen vacancy in particular and having the superconducting characteristic of the highest Tco (temp. at which electric resistance is zero) to fill the vacancy, by which the perovskite structure of the molecules is more stabilized. The film such as silicon nitride film is simultaneously formed on the surface of the oxide superconducting material and F is particularly added to the surface or near the same and the part thereof is heat-treated to dispose the added F in the adequate atomic configuration. In addition, the film is heat-treated to form the more complete blocking layer and the insulating film is denatured by oxidizing said film in the metal or semiconductor.
申请公布号 JPS63274682(A) 申请公布日期 1988.11.11
申请号 JP19870111614 申请日期 1987.05.06
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 C04B41/80;C01B13/14;C01G1/00;C01G3/00;C04B35/00;C04B35/45;H01B12/00;H01B13/00 主分类号 C04B41/80
代理机构 代理人
主权项
地址
您可能感兴趣的专利