| 摘要 |
PURPOSE:To accurately and properly form a contact hole and miniaturize semiconductor elements by forming a source region and a drain region and then forming a side wall which insulates the side surface of gate electrode by the anisotropic etching. CONSTITUTION:The contact holes 12, 12 are formed by removing unnecessary portions of an oxide film 10 by the anisotropic etching and simultaneously the side walls 13, 13 of oxide film 10 are formed on both surfaces of a gate electrode 6 (including upper and lower gate oxide films 3 and oxide film 5). With progress of anisotropic etching, the side walls 13, 13 are formed in both side surfaces of gate electrode 6 and the contact holes 12, 12 are formed corresponding to the source region 7 and drain region 8. At the same time, the silicon oxide film 9 of the upper surfaces of source region 7 and drain region 8 is also removed. When the patterning is carried out by evaporating aluminum to the entire part of contact holes 12, 12, after the upper most photoresist film 11 is removed, the electrode wirings 14, 15 of source and drain are formed respectively in conductive to the source region 7 and drain region 8.
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