| 摘要 |
PURPOSE:To prevent cracks from generating in a resist pattern due to a distortion, which is generated in a resist layer during developing, by a method wherein, in case an exposure finished resist is developed using an organic solvent, the exposure finished resist is developed in a moistening state. CONSTITUTION:The developing of an exposure finished resist in a moistening state is executed by methods, such as a method wherein the exposure finished resist is developed after being left in a high-humidity containing atmosphere before being developed, a method wherein the exposure finished resist is developed in a high-humidity containing atmosphere or a method wherein the exposure finished resist is left in a high-humidity containing atmosphere and moreover, is developed in a high-humidity containing atmosphere. The resist can be developed in such a way that water content is contained in a developing solution. These methods are modified according to the kind of the resist, the film thickness of the resist, the kind of a developing solution for the resist, the hour for leaving the exposure finished resist in an atmosphere containing a humidity made higher and the like, but it is better that the humidity is set at a humidity at least higher than that of a clean room, desirably at a humidity more than 50 % compared to the humidity of the clean room. |
