| 摘要 |
PURPOSE:To prevent the occurrence of defects during the film formation by providing a material having a thermal expansion coefficient identical to the film to be deposited on the part to be exposed to a plasma, and heating this material, thereby improving the adhesion of the film to be deposited. CONSTITUTION:Oxygen and a microwave are introduced into a plasma generating chamber 1 through a gas introducing system 5 and a waveguide 3, respectively, and a magnetic field is generated by a magnet 8. An oxygen plasma is generated by the microwave and magnetic field utilizing an electron cyclotron resonance. Then, a monosilane gas SiH4 is introduced into a gas introducing system 10 at the sample chamber side, thereby forming a silicon oxide SiO2 on a sample 12. In this case, the part directly exposed to the plasma is all covered with quartz. Accordingly, since there is no difference between the thermal expansion coefficients of the silicon oxide and the quartz, the silicon oxide film having adhered to the apparatus wall of an ECR-type plasma deposition apparatus causes no peeling.
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