| 摘要 |
Current increase effects are improved by increasing a stress to be applied to a channel section of a transistor. A semiconductor device is provided with side wall insulating films (33, 53), which have grooves (39, 59) formed by removing a dummy gate and are formed on a semiconductor substrate (11); gate electrodes (43, 63) formed in the grooves (39, 59) through a gate insulating film (41); first and second stress applying films (21, 22), which are formed on the semiconductor substrate (11) from above the side wall insulating films (33, 53), respectively; and source/drain regions (35, 36, 55, 56), which are formed on the semiconductor substrate (11) on the both sides of the gate electrodes (43, 63). The stress applying films (21, 22) are formed before the first groove (39) and the second groove (59) are formed. |
