| 摘要 |
PURPOSE:To remove the resist remnants by injecting hydrogen into the resist to be removed, thereby oxidatively decomposing the resist. CONSTITUTION:With a resist mask 12, a reactive ion etching is performed on a silicon oxide film 11 on a silicon substrate 13 using a CHF3 gas. Then, by injecting hydrogen into a surface contaminated layer 16 of the mask 12, a reaction of the impurity in the contaminated layer 16 with the hydrogen atoms is caused. Thus, when the resist is made to react with oxygen in the subsequent process, C, H constituting the resist become volatile materials such as CO, OH, and As and C, F constituting fluorocarbons simultaneously become volatile materials such as AsH3, HF to be removed. |
