| 摘要 |
PURPOSE:To obtain an image sensor which has sensitivity correctable with no change in line widths and in sensor areas and does not need a change in a manufacturing process and is applicable to a high density image sensor, by changing areas of non sensor parts in accordance with line capacities so as to make light-receiving part areas different between respective sensors. CONSTITUTION:An image sensor is composed of a plurality of sensors 12, 13 which have sensor light-receiving parts provided with non-sensor parts 14, 15, and areas of the non-sensor parts 14, 15 are changed in accordance with line capacities so as to make light-receiving part areas different between the respective sensors 12, 13. For example, non-sensor parts are formed respectively on a plurality of the sensor light-receiving parts which are formed by locating a lower electrode 2 made of Cr, a photoconductor layer 3, and an upper transparent electrode 4 made of ITO on a sensor substrate 1. For example, the non- sensor part 14 of the first sensor 12 is shaped into a triangle of its area S3, and the non-sensor part 15 of the second sensor 13 is shaped into a square of its area S4, so that sensor light-receiving parts are formed to have areas in accordance with scatterings of capacities due to differences in lengths between sensors and ICs. |
