| 摘要 |
PURPOSE:To unify the end and the support part of the lead wire of a frame and provide a non-charging supporter and make the end of the lead wire smooth and facilitate making a semiconductor device thin by a method wherein the ends of the lead wires formed in the frame are bonded together and made thinner by compression under the existence of extreme-pressure additive and the lead wire pattern is formed again and then the ends are bonded to the electrodes of a semiconductor element by compression. CONSTITUTION:A lead wire pattern is formed in a frame. After the ends 2 of the lead wires are selectively bonded together and flattened by compression so as to have a uniform thickness undar the existence of extreme-pressure additive, the lead wire pattern is formed again and the ends 4 of the lead wires are bonded to the electrodes 11 of a semiconductor element 10 by compression. For instance, the lead wire pattern is formed in a 42 alloy metal foil with a thickness of 250mum. Then only the ends 2 of the lead wires are bonded together by compression with ethylphosphate, molybdenum disulfide or graphite powder as extreme-pressure additive so as to have a thickness of 50 mum and the compression bonding part is punched to obtain a required pattern. Then the ends 4 of the lead wires are bonded to the electrodes 11 of the semiconductor element 10 by compression with solder balls 12 between and fixed. |
