| 摘要 |
PURPOSE:To avoid the creation of steps or the like in a field oxide film and obtain the field oxide film of required form by a method wherein, after nitrogen ions are implanted into a pad silicon film formed on a silicon substrate beforehand to form a silicon nitride layer, an aperture is formed and then the field oxide film is grown in the aperture. CONSTITUTION:After a pad oxide film 2 and a pad silicon film 3 are successively formed on a silicon substrate 1, nitrogen ions are implanted into the pad silicon film 3 to form a silicon nitride layer 4 in the surface side of the pad silicon film 3. Then, at least the silicon nitride layer 4 is etched to form an aperture 5. A field oxide film 7 is grown in the aperture 5 in a high temperature oxidizing atmosphere. After that, the silicon nitride layer 4, the pad silicon film 3 and the pad oxide film 2 are removed by etching. For instance, after the aperture 5 is formed, channel stop implantation for avoiding inversion is applied to the aperture 5 side of the substrate 1 to form an impurity implanted layer 6 and then the field oxide film 7 is grown on the impurity ion implanted layer 6.
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