发明名称 CIRCUIT FOR MAINTAINING STATE OF MEMORY
摘要 <p>A latch circuit provides for a reading of a state of an EPROM cell and retains that state after the reading sequence is completed. The memory state of the EPROM is inputted to a NOR gate during a power on reset condition. The output of the NOR gate is fed back through an inverter to the input of the NOR gate, such that when the EPROM is deactivated, the input of the NOR gate is latched to the previous EPROM memory state.</p>
申请公布号 JPS63271797(A) 申请公布日期 1988.11.09
申请号 JP19880011015 申请日期 1988.01.22
申请人 INTEL CORP 发明人 KAABII ESU HAARENBETSUKU
分类号 G11C17/00;G11C16/06;G11C16/20;G11C16/26 主分类号 G11C17/00
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