| 摘要 |
PURPOSE:To simplify remove the desired part of a thin film formed on a substrate with no accumulation of residue by holding the substrate in a soln. which is not chemically reactive with the thin film and by radiating pulsating laser light on the desired part of the thin film. CONSTITUTION:Al is vapor-deposited on SiO2 formed on an Si substrate by thermal oxidation and polyimide is deposited on the vapor-deposited Al. The substrate 5 is held at a prescribed position in a processing cell 3 and water 11 is introduced into the cell 3 from a soln. feeding unit 2 so that the surface of the water is made higher than the surface of a thin film on the substrate by about 100mu. Laser light emitted from a pulsating laser light source 1 is reflected by a mirror 10, shaped through a aperture 9 and radiated on the substrate 5 through a lens 8 and a window 4. At this time, the substrate 5 is accurately positioned to the processing position with an X-Y stage 6. Thus, the desired part of the thin film on the substrate 5 can easily be evaporated and removed.
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