| 摘要 |
PURPOSE:To realize an ultrahigh-speed operation by a method wherein an extremely thin insulating film is inserted between two conductors, a conductor thin film is arranged in the insulating film and an electric current tunneling through the insulating film is controlled by a voltage or an electric current which is impressed on the conductor thin film. CONSTITUTION:A metal thin film 12 functions like an emitter of a transistor; a metal thin film 14 functions like a collector; comb-shaped metal thin films 18 function like a base. If a width between a face of the comb-shaped metal thin films 18 and a base of the metal thin film 12 or the metal thin film 14 is designated as w1 and the width of an insulating material filling each gap between adjacent comb-shaped metal thin films 18 is designated as w2, it is desirable that a ratio of w1 to w2 is to be 1:2-3. A value of w1 is at best about 10Angstrom . If w2 is too big as compared with w1, it becomes difficult to control a tunnel current passing through a part of w2 by using a voltage impressed on the base 18; inversely, if w2 is almost as big as w1 or w2 is smaller than w1, the electric current flowing between the collector 14 or the emitter 12 and the base 18 is increased, and the capacity to control the electric current by the base is reduced.
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