| 摘要 |
PURPOSE:To form a contact hole connection part on a thin film wiring which generates no structual collapse in the course of a production, by arranging a lower polysilicon wiring material pattern or a diffusion layer just under a thin polysilicon wiring. CONSTITUTION:The title semiconductor device contains the following; a semiconductor substrate 1, interlayer insulating films 2, 4, 6, a thin polysilicon wiring 3 having a film thickness of about 1000Angstrom , a lower polysilicon wiring material pattern 7, a first contact hole 8 to connect the thin polysilicon wiring 3 and the lower polysilicon wiring material pattern 7, and a second contact hole 9 to connect the thin polysilicon wiring 3 and an upper wiring (e.g. aluminum) 10. The diameter of the first contact hole 8 is made larger than that of the second contact hole 9, so that both holes may overlap on each other. In this structure wherein the lower wiring material pattern 7 is laid as a cushion just under a contact hole formation part of the thin polysilicon wiring 3, the lower polysilicon wiring material pattern 7 is not subjected to etching so deeply as a groove part formed at the time of opening the contact hole.
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