A METHOD OF FABRICATING A HIGH DENSITY MASKED PROGRAMMABLE READ-ONLY MEMORY

摘要

A read-only memory is fabricated by a methodology wherein a two-dimensional semiconductor diode layer (16<1>) is laid down on a plurality of word lines which have previously been disposed upon an insulator supporting substrate (10). The semiconductor diode layer (16<1>) is disposed on the plurality of word lines (12) without regard to any alignment criteria. A plurality of Schottky diodes is then defined in the semiconductor diode layer. Each Schottky diode is aligned with one of the underlying word lines in a one-to-one mapping. A programmable material (22) is inlaid on the Schottky diodes and the plurality of bit lines (24) laid upon the programmable material. The bit lines (24) are aligned with the underlying Schottky diodes so that the Schottky diodes are again electrically coupled through the programmable material to one bit line in a one-to-one mapping.