| 摘要 |
PURPOSE:To reject crystallizations and O<-2> defects in a thin film and to obtain a thin film thermistor which is high in stability, accuracy, and reliability, by using specific thermistor materials consisting mainly of transition metals to form the thin film on a substrate which is heated at a constant temperature or above and performing heat treatment of this film. CONSTITUTION:Oxide, carbonate, oxalate of Mn, Co, Fe are used as starting materials of thermistor materials, and materials obtained by firing them or finely pulverizing them into 100mu or less are used as target materials. Their sputtering reaction products are stuck on a substrate which is made of glass, alumina, or the like and heated at 300 deg.C or above so as to form a thin film. Subsequently heat treatment of this film is performed in an atmosphere of an oxidizing gas to reject crystallizations and O<-2> defects in the thin film so that a thin film thermistor of high stability can be manufactured.
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