| 摘要 |
PURPOSE:To provide cleaning effect equivalent to or more than a wet cleaning and to improve the throughput of a whole steps of manufacturing a semiconductor by arranging an ultraviolet ray irradiator and an oxygen gas supplying unit to a loader side load locking chamber. CONSTITUTION:A plasma CVD or plasma etching apparatus has a reaction chamber 10 and a load locking chamber 20. O2 gas supplying means 30 is arranged at a suitable position in the chamber 20. O2 supply amount is regulated by a valve 32. An exhaust duct 24 is arranged in the chamber 20. In order to convey a wafer 3 into the chamber 10, an ultraviolet ray irradiator 40 is disposed on the ceiling of the load locking chamber at the position where wafer carrier means 22 waits in a state for holding the wafer 3. The irradiator 40 is a light source for irradiating an ultraviolet ray having 253.7nm or shorter in wavelength. The light source may, for example, use a carbon arc lamp, a xenon lamp, a mercury lamp or an excimer laser, etc. The ultraviolet light source most preferably uses a low-pressure mercury lamp.
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