Silicide semiconductor element with polysilicon regions and method of manufacturing thereof.

摘要

A method of fabricating a polycide semiconductor element, the method including the steps of:- (a) forming a lift-off mask on a first region of a layer of polysilicon; (b) implanting a first dopant into second regions of the polysilicon which are adjacent the first region, the first region being masked from implantation by the lift-off mask; (c) forming a layer of silicide over the implanted regions and the lift-off mask; and (d) removing the lift-off mask and the respective part of the layer of silicide which is formed thereover thereby to expose the first region. The invention also provides a semiconductor element. h