发明名称 Method for evaluating processing parameters in the manufacture of semiconductor devices
摘要 This method, allowing pointing out of the effects of one manufacture parameter independently from other parameters and phenomena and yielding very high precision in measurement, comprises a first step in which a symmetrical resistive bridge is formed, comprising a pair of test resistive arms having topological characteristics related to the process or phenomenon to be evaluated and a pair of reference resistive arms. Each pair of arms is formed by two reciprocally counterposed resistors with identical topography and value. The method furthermore comprises a second step in which a current, having a known value, is applied to the bridge, the voltages present in suitable points of the bridge are measured, and the difference in conductance between the pair of test resistive arms and the reference arms is calculated according to the known or calculated current and voltage values.
申请公布号 US4782288(A) 申请公布日期 1988.11.01
申请号 US19860946239 申请日期 1986.12.24
申请人 SGS MICROELETTRONICA S.P.A. 发明人 VENTO, GIUSEPPE
分类号 G01R17/02;(IPC1-7):G01R17/00;G01R31/00 主分类号 G01R17/02
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