| 摘要 |
PURPOSE:To equalize the annealing temperature of the surface of a sample while forming a semiconductor single crystal layer having excellent and uniform crystalline characteristics onto an insulating substrate by assigning at least one of the positions of scanning and scanning speed at every scanning line of beams so that annealing temperatures at each position of scanning of beams applied onto the sample are kept constant. CONSTITUTION:The detecting signal of a temperature sensor 15 is transmitted to a computer 16. Information such as the order of the scanning of beams, scanning speed at every position of scanning, etc., is sent to a buffer memory 17 from the computer 16, and stored temporarily to the memory. The buffer memory 17 removes the delay of the transfer time, and the memory information of the memory 17 is transmitted to an X deflection driver 18 and a Y deflection driver 19. The upper section of a sample 12 is scanned with electron beams by an X deflection coil 13 and a Y deflection coil 14. An annealing region A is annealed by the scanning of approximately twenty beams, scanning speed (v) is kept constant, and the positions of scanning are determined at every other beam. Electron beams are deflected at high speed in the direction that they cross at right angles with the direction of scanning, and changed into quasi linear beams. The effect of remaining heat is reduced by the scanning, thus improving the uniformity of a surface temperature.
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