| 摘要 |
PURPOSE:To improve photoresponsiveness by a method wherein a 1st semiconductor film is used as a part producing carriers by a photoelectric effect and a 2nd semiconductor film which has a larger mobility of carriers than the 1st semiconductor film is used as a passage for a current applied between two planar electrodes facing each other. CONSTITUTION:A tungsten film 9 is deposited on a glass substrate 8 and the tungsten film 9 is etched to form planar electrodes. Then microcrystalline silicon 10 is deposited on the tungsten electrodes and, successively, amorphous silicon is deposited on the microcrystal silicon. In a photoelectric converter manufactured by a process like this, carriers produced in the amorphous silicon are injected into the microcrystalline silicon by the difference in band gap between the amorphous silicon and the microcrystal silicon. With this constitution, a photoelectric converter with a high photoelectric response speed which does not depend upon a semiconductor thin film showing a photoelectric effect can be obtained.
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