| 摘要 |
PURPOSE:To form a thin film wiring in high quality subjected to no void applicable to integrated circuit device, etc., by the application of zirconium added aluminium. CONSTITUTION:A thin film wiring 3 is formed of zirconium added aluminum alloy. For example, a silicon oxide film 2 is deposited on a silicon substrate 1 and then a zirconium added aluminum thin film 3 is deposited by sputtering process furthermore a silicon nitride film 4 as a cover film is deposited to form a thin film wiring structure. Besides, a ternary alloy comprising silicon added aluminum normally applicable to prevent the reaction of silicon substrate against aluminum with zirconium added thereto is also applicable. Through these procedures, any void due to heat treatment after depositing cover film can be prevented from occurring by the application of three element alloy with zirconium further added to silicon added aluminum.
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