| 摘要 |
PURPOSE:To increase a switching rate by using a high-temperature superconductive material such as barium, yttrium, a copper oxide, etc., as a gate electrode material and substantially bringing the electric resistance value of a gate electrode to zero. CONSTITUTION:A ceramic material such as Ba, Y and a Cu oxide displays superconduction at a high temperature (-100 deg.C), and a superconduction start temperature is determined by interstitial oxyden-quantity and a grating space. Superconduction can be generated at a higher temperature on a crystalline magnetic field and the surface, and superconduction is also enabled at normal temperature under an amorphous state and through high-pressure oxidation treatment, etc. When a gate electrode 4 for a MISFET and a wiring 6 for an LSI are formed by employing the material, the electric resistance of the gate electrode or wiring resistance is lowered, thus increasing a switching rate. The high-temperature superconductive material can be applied through sputtering, etc.
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