| 摘要 |
PURPOSE:To augment the capacity of a capacitor and to obtain an increase in the density of a memory by a method wherein bit lines are buried in under the capacitor and a switching transistor and word lines to intersect with the bit lines are provided over the bit lines. CONSTITUTION:Bit lines 6 are buried in the lower part in a first groove formed in a semiconductor substrate 1 under a capacitor 200 and a switching transistor 100 and word lines 17 are formed in such a way as to intersect with the bit lines 6 over the bit lines 6. Accordingly, as the transistor 100, the bit lines 6 and the word lines 17 can be buried in the deeper groove and a shallower groove, the capacitor 200 only can be formed on the surface of the substrate 1. Moreover, as each bit line 6 is buried in the deeper groove provided in the substrate 1, the line is shielded by not only an insulating film 5 but also the substrate 1 and induced noise can be significantly reduced. Thereby, the upper surface of the substrate can be all used as the storage capacitor and the capacity of the capacitor can be augmented and at the same time, an increase in the density of a memory can be contrived. |
