| 摘要 |
PURPOSE:To reduce the deterioration of the interlayer insulating film by performing an patterning by a reactive ion etching (RIE) using a mixed gas of silicon tetrachloride, boron trichloride and oxygen, or trifluorobromomethane as a reaction gas, thereby shaping the cross section of the electrode or wiring into a trapezoid. CONSTITUTION:A patterning by RIE is performed using a mixed gas of silicon tetrachloride and oxygen, a mixed gas of boron trichloride and oxygen, a mixed gas of silicon tetrachloride and boron trichloride and oxygen, a mixed gas of any one of the mixed gases and chlorine, or trifluorobromomethane as a reaction gas 4a. In RIE, the etching proceeds where the etching exceeds the deposition. With this, the cross-sectional shape of an electrode wiring 5a is made trapezoidal, whereby the deterioration of the interlayer insulating film can be reduced.
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