| 摘要 |
<p>PURPOSE:To realize a semiconductor light emitting device of low threshold current and high efficiency by liquid phase epitaxial growth method, by applying a plurality of semiconductor layers composed of AlInAs compound or AlGaInAs compound to a buried layer. CONSTITUTION:On an N-type 100 InP substrate 1, the following are grown by a liquid phase epitaxial growth; an N-type InP clad layer 2, an InGaAsP active layer 3, a P-type InP clad layer 4 and a P-type InGaAsP cap layer 5. The mesa stripe region of an InGaAsP active layer 3 is formed by an etching applying a mask 16. By stacking Al0.30Ga0.18In0.52As layers 7, 8 on an Al0.48In0.52 As layer, a buried layer having an flat upper surface is realized. By turning a part of the Al0.30Ga0.18In0.52As layer into an N-type layer 8, an N-P reverse junction is constituted. Then a protective insulating film 10 is arranged, a P-side electrode 11 is formed, and an N-side electrode 12 is formed on the rear of the substrate 1. After performing cleavage and the like, a laser element of low threshold current and high efficiency is completed, thereby.</p> |
