发明名称 REMOVING METHOD FOR SHORTCIRCUIT UNIT OF THIN FILM ELECTRONIC DEVICE
摘要 PURPOSE:To effectively remove a shortcircuit unit of a thin film function material by discharging charged capacity in contact between the electrodes of the front and back surfaces which holes the function material of a thin film therebetween. CONSTITUTION:A transparent electrode 2 of InO.Sn and an aluminum electrode 6 are shortcircuited by the pinholes 7 of Y2O3 layers 3, 5 and a ZnS layer 4 as thin film function materials. The layers 3, 5 have approx. 3,000Angstrom in thickness and the layer 4 has approx. 5,000Angstrom in thickness. When a capacity of 0.1muF which is charged at 200V is contacted between the electrodes 2 and 6 and discharged through the pinholes 7, the aluminum of the pinholes 7 generates heat and is removed. When a plurality of pinholes of different size exist, the capacity is contacted and discharged plural times and all are removed. In a device having a rectifying property, the capacity is contacted to apply a voltage in a reverse direction. The operating voltage may be regulated by connecting R or L in series or in parallel with the capacity.
申请公布号 JPS5994468(A) 申请公布日期 1984.05.31
申请号 JP19820203269 申请日期 1982.11.19
申请人 SUMITOMO DENKI KOGYO KK 发明人 ICHIYANAGI HAJIME;FUJITA NOBUHIKO
分类号 H01L31/04;H01L31/18 主分类号 H01L31/04
代理机构 代理人
主权项
地址