| 摘要 |
PURPOSE:To minimize a wiring width and an occupation area of a contact hole formation part, by forming a plurality of wiring layers on a semiconductor substrate through respective layer insulation films and next by connecting the upper and lower parts of these wiring layers to each other on sides of the wiring layers through a common contact. CONSTITUTION:A pattern of a first wiring layer 1 is formed in a prescribed shape on a semiconductor substrate, and a layer insulation film 6 is formed on the first wiring layer 1. In succession, a second wiring layer 3 is formed on this layer insulation film 6 and further a layer insulation film 7 is formed thereon. Next, a contact hole 9 is opened on a prescribed position. When the contact hole 9 is opened in this way, the second wiring layer 3 and the first wiring layer 1 are respectively formed in locally cut shapes. When a reduced- pressure CVD method is used to make a conductive material grow all over the surface of the semiconductor substrate including an inner wall of the contact hole and to fill the contact hole with this conductive material, a common contact is formed to connect the first wiring layer with the second wiring layer.
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