| 摘要 |
PURPOSE:To improve the dimensional accuracy of the line width of a photoresist pattern after development by a method wherein an enviromental temperature when the photoresist is applied is detected and one of an exposure time and a development time is varied in accordance with the environmental temperature detected beforehand. CONSTITUTION:A spinning coater comprises a container 1, called a cup, which is equipped with an exhaust system 4 and a table 2 provided in the container 1 so as to be rotated freely. A silicon wafer 3 is fixed to the table 2 by a vacuum chuck. An enviromental temperature when photoresist is applied is measured by providing a temperature sensor 5 in the surroundings of the container 1, for instance above the wafer 3 to which the resist is applied or in the exhaust system 4. The variations of the exposure time and the development time following the variation the environmental temperature are obtained beforehand and treatment is carried out in accordance with the obtained results. With this constitution, factors which fluctuate the line width of the required resist pattern are eliminated so that a highly accurate resist image can be obtained. |
