发明名称 HIGHLY PURE NITROGEN GAS PRODUCING APPARATUS
摘要 <p>A producing apparatus of highly pure nitrogen gas which is used in electronic industry for manufacturing silicon semi-conductors. By the apparatus of this invention, the liquefied nitrogen storage means (23) is connected to rectifying column (15) through the inlet channel (24), the ultra low temperature compressed air supplied into the rectifying column (15) through the air compression means (9), water and carbon dioxide removing means (12) and heat exchangers (13) (14) is cooled further by the evaporating heat of the liquefied nitrogen, the nitrogen is taken out in gas form by utilizing the difference in boiling point, the oxygen is left as liquid. The obtained nitrogen gas is combined with the gassified liquid nitrogen from the liquefied nitrogen storage means (23) and made into product nitrogen gas.</p>
申请公布号 EP0279500(A3) 申请公布日期 1988.10.26
申请号 EP19880200470 申请日期 1984.03.07
申请人 DAIDOUSANSO CO., LTD. 发明人 YOSHINO, AKIRA
分类号 F25J3/04;(IPC1-7):F25J3/04 主分类号 F25J3/04
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