| 摘要 |
PURPOSE:To perform multiaxis mode oscillation with excellent reproducibility by a method wherein multiple crystal layers are deposited through the intermediary of stripe grooves and non current implanted regions provided in parallel on the groove bottom in the stripe direction. CONSTITUTION:A rectangular grooves 12 are formed on a substrate 2. Firstly a current blocking layer 3 is grown. This layer 3 and the upper surfaces of the grooves 12 are made flat during the growing process. Secondly stripe grooves 13 are formed by etching process from the upper surface of the layer 3 right above the regions wherein the grooves 12 are arrayed to the substrate 2. Resultantly, the layer 3 is left inside the grooves 12 and removed like stripes along the grooves 13 outside the grooves 12. Thirdly the first clad layer 4, an active layer 5, the second clad layer 6 and a cap layer 7 are successively deposited on the layer 3. When a semiconductor laser element thus formed is implanted with current, only the regions in the grooves 13 wherein the layer 3 outside the grooves 12 is removed are implanted with carrier to form carrier implanted regions and non-implanted regions alternately in the stripe direction performing multiaxis mode oscillation. |
