发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM
摘要 PURPOSE:To increase the freedom in designing patterns, in lithography, by using overlapped writing fields, and performing writing. CONSTITUTION:Written patterns 23 and 24 are distributed so as to avoid the boundaries of writing fields 13, 14 and 16, which are overlapped in a manner that the center of a field coincides with one end of another field. The pattern 23 is distributed to the field 13, and a written pattern 25 is distributed to a writing field 15. As for the pattern 24 the writing field 16 is added to the writing field 14 and overlapped on the field 14 so as to include the pattern 24 in the field 16. The written patterns 23, 24 and 25 are evacuated from the boundaries of the fields by the above described means. Thus the freedom in designing the patterns is increased.
申请公布号 JPS63257226(A) 申请公布日期 1988.10.25
申请号 JP19870092202 申请日期 1987.04.14
申请人 NEC CORP 发明人 KITAKATA MAKOTO
分类号 H01L21/027;H01L21/30 主分类号 H01L21/027
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