| 摘要 |
<p>PURPOSE:To improve the quality of a photomask by adhering a mask material while generating cracks in a resist layer formed at the periphery of a defective part and peeling off an unnecessary mask material. CONSTITUTION:The resist layer 5 which has an opening part 7 at the periphery of the defective part of a photomask layer formed on a transparent substrate 4 is formed in the manufacture of the photomask wherein a process of correcting the defect of the photomask 2 is provided. Then the mask material 8 for correction is adhered over the entire surface even in the defect part 3, cracks 9 are generated in the resist layer 5 and the mask material 8 thereon, and the resist layer 5 is removed together with the mask material 8 thereon. Namely, the resist layer 5 and mask material 8 have cracks 9, so peeling liquid can easily enter the resist layer 5. Consequently, the resist layer 5 and mask material 8 for correction thereon are removed excellently in a short time.</p> |
