| 摘要 |
PURPOSE:To prevent the deterioration and non-uniformity of electric characteristics after annealing, by forming, on a substrate, III-V compound containing group V atoms constituting said substrate. CONSTITUTION:Photoresist 4 is spread on a semi-insulative GaAs substrate 1, and a patterning for selective ion implantation is performed. Under a condition where a GaAs MESFET operating layer can be formed, ion implantation is performed to form an ion implantation layer 2. After the ion implantation, the photoresist 4 is eliminated, and the substrate 1 surface is cleaned. Then an undoped semi-insulative GaAlAs thin film 3 is formed on the whole surface of the substrate 1. After the thin film 3 is formed, an annealing for activation of the ion-implantation layer 2 is performed. Thereby, high quality gas difficult to be controlled is made unnecessary, and further the deterioration and non- uniformity of electric characteristics after annealing can be prevented.
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