发明名称 FIELD EFFECT TRANSISTOR OSCILLATION CIRCUIT
摘要 PURPOSE:To absorb the variance in threshold value at the manufacture of a FET by connecting the source of 1st and 2nd FETs in common to a current source circuit using a 3rd FET so as to form an amplifier circuit, connecting plural stages of the amplifiers in cascade to constitute a negative feedback loop thereby controlling the gate-source voltage of the 3rd FET. CONSTITUTION:Resistive load type source coupling logic circuits I1-In+1 are connected in cascade to form a ring oscillator of the negative feedback circuit constitution, the oscillator is connected to the source coupling logic circuit 54 incorporated with FETs 58, 59 having drain resistors 55, 56 to form a voltage controlled oscillator. The ring oscillator is constituted by two Schottky diodes 3, 4 and 5, 6 connected in series, MESFETs 7, 8 connected to them and the 3rd FET 9 for current source connected to the two parallel circuits. Through the constitution above, power terminals 101, 102 are provided to both ends of the circuit and a bias input terminal 43 is provided to the gate of the FET 9.
申请公布号 JPS63254814(A) 申请公布日期 1988.10.21
申请号 JP19870088667 申请日期 1987.04.13
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 MAETA TADASHI
分类号 H03K3/03;H03K19/094;H03K19/0952 主分类号 H03K3/03
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