| 摘要 |
PURPOSE:To obtain the titled growth apparatus capable of forming an epitaxial layer having large area and uniform thickness on a substrate held above a crucible containing a source for forming epitaxial crystal layer, by forming the opening part of the crucible in elliptic shape and the side part of the crucible in flat shape. CONSTITUTION:The cross-section of the top opening part 32 of a crucible 31 has flat elliptic shape and the bottom of the crucible 31 is furnished with a bottom-closed inner tube 33 protruded downward. A source material (PbTe or PbSnTe) for epitaxial layer to be formed on a substrate 35 (e.g. PbTe) is placed in the crucible 31 and the inner tube 33 contains Te for the control of the composition of the epitaxial layer. Accordingly, the molecules evaporated from the bottom of the crucible 31 are moved along the dotted lines and reach the positions A, B and C at the opening part 32. Since the opening part 32 has flat shape and the dimension l in the direction of the short side is short, all parts of the opening part 32 have equal distance from the hot wall 34 of the crucible 31. Consequently, the ratio of molecules slantly incident upon the substrate 35 after collision to the hot wall 34 is decreased to equalize the amount of evaporated molecules of the source material.
|
