| 摘要 |
PURPOSE:To improve a degree of coverage at a steep stepped part by a method wherein a distance between the center of a semiconductor substrate and the center of a target is kept constant and the semiconductor substrate is turned on its central axis while a peripheral edge of the semiconductor substrate is brought close to the target in succession. CONSTITUTION:A semiconductor substrate 2 is held by a substrate-holding stage 3; the substrate-holding stage 3 is turned on its central axis; a distance l1 between the center of the semiconductor substrate 2 and the center of a target 1 is kept constant; a peripheral edge of the semiconductor substrate is brought close to the target while the substrate is turned. By using this film- formation device by sputtering, it is possible to improve a degree of coverage at a steep stepped part of a semiconductor device up to about 80%.
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