| 摘要 |
PURPOSE:To obtain a pressure detecting element which has a small size, can stably measure a pressure even at high temperature, has uniform element characteristics and high sensitivity by forming a pressure sensitive layer made of a single crystal semiconductor on the diaphragm of a first insulating layer, and etching a substrate under the diaphragm to form a cavity. CONSTITUTION:A substrate 1, a first insulating layer 5 bonded to the main surface of the substrate 1 and having good etching resistance, a pressure sensitive layer 11 made of a single crystal semiconductor formed on the diaphragm of the layer 5, second insulating layers 12, 13 so formed as to cover the layer 11, a cavity 15 so formed by etching the substrate 1 under the diaphragm of the layer 5 through an etching hole 14 formed through the layers 12, 13 and 5 perpendicularly to the substrate 1 at the periphery of the diaphragm, and a sealing material 16 for sealing the hole 14. Since the layer 11 is composed of the single crystal semiconductor in this manner, detecting characteristics between the elements are uniformized, and the pressure sensitive layer is surrounded by the first and second insulating layers. Therefore, when it is used at a high temperature, no leakage current is generated to stabilize the detecting characteristics.
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