| 摘要 |
PURPOSE:To sharply shorten the time for a process to remove a photosensitive polyimide material by a method wherein a third-layer wiring part coming into electrical contact with a second wiring part via a through hole is formed on the polyimide material and a process to form an air bridge wiring part including the process to remove only the polyimide material from the surface of a semiconductor substrate is executed. CONSTITUTION:A pattern of a resist 9 is formed on a substrate 1 ; a recessed part 10 is formed by a wet etching method. Then, a first-layer wiring part 2 is formed inside the recessed part 10; a silicon oxide film 3 is grown on the substrate 1. A second-layer wiring part 4 is formed on this silicon oxide film 3. At this stage, a photosensitive polyimide material 5 is coated on the whole surface. A resist 12 is formed on it; a window is opened on the second-layer wiring part 4. Lastly, the photosensitive polyimide material 5 is removed by an oxygen plasma; an air bridge wiring part is formed. By this setup, the thickness of the photosensitive polyimide material can be reduced to a half as compared with a conventional method; the time required for the process to remove the photosensitive polyimide material by using the oxygen plasma can be reduced to a half.
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