| 摘要 |
PCT No. PCT/EP85/00193 Sec. 371 Date Jan. 2, 1986 Sec. 102(e) Date Jan. 2, 1986 PCT Filed May 1, 1985 PCT Pub. No. WO85/05224 PCT Pub. Date Nov. 21, 1985.The semiconductor device and arrangement include a thyristor switch (T1-T3) with associated turn-on (DM) and turn-off (PM1, PM2) devices. The thy=ristor switch includes a PNP transistor (T1) and one or two NPN transistors (T2, T3) each of which has an emitter constituted by a path of separate regions (115) of N+ material each completely surrounded by P+ material of a zone (110). This path either has a boat shape and partly surrounds and is located at a constant distance of a substantially rectangular zone (109) of P+ material constituting the emitter of the PNP transistor (T1), or has an S-shape and is located at a constant distance of the S-shaped emitter of the PNP transistor (T1).
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