| 摘要 |
PURPOSE:To prevent surface oxidation of rear metallic electrodes and the mixing of impurities into light active layers, by forming the light active layers on the rear metallic electrodes exclusive of one end upper surface which is positioned along an adjacent interval part thereof and next by forming a junction electrode on the one end upper surface of the rear metallic electrodes. CONSTITUTION:An insulating film 2 is formed all over the one surface of a substrate 1 and rear metallic electrode films 3a, 3b made of Al, Ag, or the like are formed dividedly on the film 2. Next, light active layers 4a, 4b made of amorphous silicon or the like are formed on the rear metallic electrodes exclusive of one end upper surface 3be which is positioned along an adjacent interval part (ab). Finally transparent electrode films 6a, 6b made of transparent oxide electrode materials such as indium tin oxide ITO are formed on the light active layers 4a, 4b. The left transparent electrode film 6a is extended to a junction electrode film (5) on the right rear metallic electrode film 3b. Surface oxidation of the rear metallic electrodes and the mixing of impurities into the light active layers can be thus prevented, and so electrical characteristics of a photovoltaic device can be improved.
|
