| 摘要 |
PURPOSE:To facilitate signal processing and to enhance signal detection accuracy, by forming a sensor by adhering a piezoelectric element composed of an org. film to the gate electrode of the MOSFET formed to a substrate. CONSTITUTION:When a sonic wave is inputted, a piezoelectric element 9 receives the pressure of the sonic wave to generate strain and the potential thereof changes to become the input signal of an MOSFET and this signal is amplified to be taken out. Since the piezoelectric element 9 is directly adhered to the gate of the MOSFET, a stable signal is obtained. Since an org. film is used as the piezoelectric element 9, one having an arbitrary thickness is easily obtained and can easily deal with from a low frequency region to a high frequency region of an ultrasonic wave.
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