| 摘要 |
PURPOSE:To enable high-speed and large-area treatment, by arranging plural targets releasing sputtering grains by means of irradiation from an ion source into a shape of an inclined plane of a circular cone, etc., standing on the ion- source side as a base so as to converge the above-mentioned grains. CONSTITUTION:This ion beam sputtering device is composed of an ion source 1 producing plasma, a vacuum vessel 6 fitted to the above in a state held airtight, targets 7, and a substrate 8 on which a film is formed by means of the grains released from the targets 7. The above targets 7 release the grains sputtered by the irradiation of an ion beam from the ion source 1, and moreover, plural targets 7 are arranged so that they form a part of the inclined plane of a circular cone, etc., standing on the above-mentioned ion-source 1 side as a base.
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