| 摘要 |
PURPOSE:To develop a copper alloy for electronic and electrical parts improved in brittleness at medium and high temps. and having migration resistance while eliminating the need for the homogenizing treatment of an ingot, by incorporating specific amounts of Fe, P, Zn, Mg, and one or more elements among Cr, Ti, and Zr to Cu. CONSTITUTION:As a copper alloy for electronic and electrical parts, such as semiconductor device, integrated circuit, terminal, and connector, a Cu alloy containing, by weight, 1.5-3.0% Fe, 0.001-0.1% P, 1.0-5.0% Zn, 0.001-0.01% (not including 0.01%) Mg, and 0.001-0.01% (not including 0.01%), in total, of one or more elements among Cr, Ti, and Zr is used. By producing a Cu alloy free from intercrystalline cracks in the course of heating or hot working without applying homogenizing treatment to the ingot of this Cu alloy, the occurrence of short-circuit accidents due to the phenomenon of Cu migration occurring as the electrical and electronic parts prepared by using this Cu alloy is made highly concentrated can be prevented.
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