| 摘要 |
PURPOSE:To implement complete agreement of the position of an upper gate and the position of a lower gate when the positions are viewed from the upper side, by performing exposure to a resist film for determining the position of the upper gate through the rear side of a glass substrate, and using the lower gate as a mask for said exposure. CONSTITUTION:Light for exposure is projected on a resist film 6, which is formed on an upper gate insulating film 5 through the rear side of a glass substrate 1. A lower gate 2 is used as a mask for said exposure to the resist film 6. An upper gate 8 is formed on a recess part 7, which is an unexposed part of the resist film 6. Thus the forming position of the upper gate 8 can be made to agree to the forming position of the lower gate 2 completely. Therefore, parasitic capacitances formed between the lower gate 2 and the upper gate 8 and between a source 9 and a drain 10 can be made vary small. |
