| 摘要 |
PURPOSE:To improve quality of a silicon layer recrystallized on an insulation layer and reduce the amount of oxidation for insulation by forming an extremely thin polycrystalline silicon layer on a seed part and then recrystallizing the polycrystal silicon layer. CONSTITUTION:A polycrystalline silicon layer 5 is formed on Si3N4 film 4 in the thickness of 0.5 mum, the polycrystalline silicon layer 5 on a seed part 2 is removed by etching and thereafter a thin polycrystalline silicon layer 6 of about 0.2 mum is deposited on the seed part 2 and polycrystalline silicon layer 5. Next, the polycrystalline silicon layers 5, 6 are irradiated with laser or elec tron beam for melting and recrystallization. Here, the polycrystalline silicon layer 6b on the oxide film 3 other than the seed part 2 recrystallizes the polycrystalline silicon layer 5 with the recrystal having good crystal property on small seed part 2 considered as a seed crystal and therefore a recrystallized layer having good crystal property can be obtained. Accordingly, recrystallization of polycrystal silicon on the seed part can be obtained with good property and the crystal property of single crystal silicon to be recrystal lized in the lateral direction can be improved.
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