BIPOLAR TRANSISTOR WITH INSULATED GATE ELECTRODE

摘要

FIELD: semiconductor engineering. ^ SUBSTANCE: proposed bipolar transistor has no gate components and gate current is conducted in insulated-gate bipolar transistor chip starting from gate lead and directly through polycrystalline silicon layers of gate electrodes to separate cells of mentioned bipolar transistor. ^ EFFECT: facilitated manufacture, provision for homogeneous connection. ^ 6 cl, 7 dwg