| 摘要 |
A field-effect semiconductor device comprises a via-hole electrode (6a) formed so as to penetrate from the top to the back of the semiconductor substrate (1), a dielectric film (10) formed on the semiconductor substrate so as to be opposite to the via-hole electrode, and an electrode (26), forming a via-hole type of passive element, such as a capacitor, so as to improve the integration degree. |
